Chinese scientists have made a huge leap in making 2D semiconductor wafers. They created a new method called oxy-MOCVD to mass produce 6-inch molybdenum disulfide (MoS2) wafers. These 2D materials are thinner than a sheet of paper and can perform better than silicon chips with lower power use. The challenge was growing large, uniform wafers quickly and without defects. Traditional methods like chemical vapour deposition (CVD) were slow and produced small samples. Metal-organic chemical vapour deposition (MOCVD) could grow bigger films but with many defects and carbon contamination. Wang’s team found a crystal growth step needed too much energy and slowed production. Adding oxygen changed the process, lowering the energy barrier and enabling much faster growth. They grew a perfect 6-inch MoS2 wafer on sapphire substrate. Their method is over 100 times faster than regular MOCVD and produces clean crystals. Tests showed transistors made from these wafers had electron mobility 10 times higher than previous methods. The team said, “this approach bridges the gap between lab-scale CVD quality and industrial-scale MOCVD scalability.” Their breakthrough was published in Science on January 29. A week later, another team in Beijing showed a way to watch MoS2 crystals grow live under a special microscope, which may help reduce defects further. Chinese scientists are leading the world in making next-generation 2D semiconductors. Last year, they also grew 2-inch indium selenide wafers and built processors with 5,900 MoS2 transistors that run 32-bit instructions. This new method could speed up making the fast, efficient chips of the future.